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| 2SK1628, 2SK1629 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3PL D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1628, 2SK1629 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage 2SK1628 2SK1629 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C VGSS ID ID(pulse)* IDR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 450 500 30 30 120 30 200 150 -55 to +150 Unit V V A A A W C C 2 2SK1628, 2SK1629 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Symbol Min 2SK1628 V(BR)DSS 2SK1629 V(BR)GSS IGSS 450 500 30 -- -- -- -- -- -- 10 250 V A A IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 -- -- |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 12 -- -- -- -- -- -- -- -- -- -- 0.20 0.22 20 2800 780 90 32 140 200 100 1.1 600 3.0 0.25 0.27 -- -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V ns IF = 30 A, VGS = 0 IF = 30 A, VGS = 0, diF/dt = 100 A/s ID = 15 A, VGS = 10 V, RL = 2 ID = 15 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz 1 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1628 IDSS 2SK1629 Gate to source cutoff voltage V ID = 1 mA, VDS = 10 V ID = 15 A, VGS = 10 V * 1 Static Drain to source 2SK1628 RDS(on) on state resistance 2SK1629 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test 3 2SK1628, 2SK1629 Power vs. Temperature Derating 300 Channel Dissipation Pch (W) Maximum Safe Operation Area 500 200 ar ea Drain Current ID (A) O is pe lim ra ite tion d in by t R his 200 50 20 10 5 2 1 0.5 D S (o n) 100 DC PW 1 = 10 C 1 10 0 0s s m s Op er 100 ati on m s (T (1 = 25 Sh Ta = 25C C ot ) ) 2SK1628 2SK1629 1 3 30 10 100 300 1,000 Drain to Source Voltage VDS (V) 0 50 100 Case Temperature TC (C) 150 Typical Output Characteristics 50 Typical Transfer Characteristics 20 VDS = 20 V Pulse Test 16 10 V 7V 6V 40 Drain Current ID (A) 30 Pulse Test Drain Current ID (A) 12 20 5V 8 4 75C -25C TC = 25C 10 VGS = 4 V 0 10 20 30 40 Drain to Source Voltage VDS (V) 50 0 2 4 6 8 10 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test Drain to Source Saturation Voltage vs. Gate to Source Voltage 8 Pulse Test Static Drain to Source on State Resistance RDS (on) () 10 Drain to Source Saturation Voltage VDS (on) (V) 2 1.0 0.5 6 20 A 4 10 A ID = 5 A 0 4 8 12 16 20 VGS = 10 V 15 V 0.2 0.1 0.05 1 2 5 10 20 Drain Current ID (A) 2 50 100 Gate to Source Voltage VGS (V) 4 2SK1628, 2SK1629 Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) () Forward Transfer Admittance yfs (S) Forward Transfer Admittance vs. Drain Current 50 VDS = 20 V Pulse Test -25C TC = 25C 75C 1.0 VGS = 10 V Pulse Test 0.8 20 10 5 2 1.0 0.5 0.2 0.6 ID = 20 A 0.4 10 A 5A 0.2 0 -40 0 40 80 120 Case Temperature TC (C) Body to Drain Diode Reverse Recovery Time 160 0.5 1.0 5 2 Drain Current ID (A) 10 20 Typical Capacitance vs. Drain to Source Voltage 10,000 Ciss Capacitance C (pF) 5,000 Reverse Recovery Time trr (ns) 2,000 1,000 500 di/dt = 100 A/s, Ta = 25C VGS = 0 Pulse Test VGS = 0 f = 1 MHz 1,000 Coss 200 100 50 0.5 100 Crss 10 1.0 2 5 10 20 Reverse Drain Current IDR (A) 50 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 500 Drain to Source Voltage VDS (V) Switching Characteristics VDD = 100 V 250 V 400 V 20 Gate to Source Voltage VGS (V) 500 td (off) Switching Time t (ns) 400 16 200 100 50 tf tr 300 VDS 12 VGS 8 V DD = 400 V 250 V 100 V ID = 20 A 200 td (on) 20 10 5 0.5 VGS = 10 V VDD = 30 V PW = 2 s, duty < 1% * * 100 4 0 40 80 120 160 Gate Charge Qg (nc) 0 200 1.0 2 5 10 20 Drain Current ID (A) 50 5 2SK1628, 2SK1629 Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) 16 Pulse Test 12 8 5 V, 10 V VGS = 0, -10 V 0 0.4 0.8 1.2 1.6 Source to Drain Voltage VSD (V) 2.0 4 Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 ch-c (t) = S (t) * ch-c ch-c = 0.625C/W, TC = 25C PDM C/W PW D = PW T 0.02 0.03 0.01 ulse ot P 1 Sh T 100 1m 10 m Pulse Width PW (s) 100 m 0.01 10 1 10 Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL Wavewforms 90 % Vin Vout 10 % 10 % 90 % tr 90 % td (off) 10 % 50 Vin = 10 V . VDD = 30 V . td (on) tf 6 2SK1628, 2SK1629 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 7 |
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